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trenchfet power mosfets

load switch ? game stations ? notebooks ? desktops si4403dy vishay siliconix new product document number: 71683 s-04393?rev. a, 13-aug-01 www.vishay.com 1 p-channel 1.8-v (g-s) mosfet v ds (v) r ds(on) ( ) i d (a) 0.017 @ v gs = ?4.5 v ?9 ?20 0.023 @ v gs = ?2.5 v ?7 0.032 @ v gs = ?1.8 v ?6 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 s g d p-channel mosfet

parameter symbol 10 secs steady state unit drain-source voltage v ds ?20 gate-source voltage v gs 8 v a t a = 25 c ?9 ?6.5 continuous drain current (t j = 150 c) a t a = 70 c i d ?7 ?5.0 pulsed drain current i dm ?30 a continuous source current (diode conduction) a i s ?2.1 ?1.3 t a = 25 c 2.5 1.35 maximum power dissipation a t a = 70 c p d 1.6 0.87 w operating junction and storage temperature range t j , t stg ?55 to 150 c

parameter symbol typical maximum unit t 10 sec 38 50 maximum junction-to-ambient a steady state r thja 71 92 c/w maximum junction-to-foot (drain) steady state r thjf 19 25 c/w notes a surface mounted on 1? x 1? fr4 board.
si4403dy vishay siliconix new product www.vishay.com 2 document number: 71683 s-04393 ? rev. a, 13-aug-01

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ? 250 a ? 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 16 v, v gs = 0 v ? 1 zero gate voltage drain current i dss v ds = ? 16 v, v gs = 0 v, t j = 70 c ? 10 a on-state drain current a i d(on) v ds ? 5 v, v gs = ? 4.5 v 20 a v gs = ? 4.5 v, i d = ? 7.4 a 0.014 0.017 drain-source on-state resistance a r ds(on) v gs = ? 2.5 v, i d = ? 6.3 a 0.018 0.023 ds(on) v gs = ? 1.8 v, i d = ? 5.5 a 0.024 0.032 forward transconductance a g fs v ds = ? 15 v, i d = ? 7.4 a 28 s diode forward voltage a v sd i s = ? 1.3 a, v gs = 0 v ? 0.64 ? 1.1 v dynamic b total gate charge q g 30.5 50 gate-source charge q gs v ds = ? 10 v, v gs = ? 5 v, i d = ? 7.4 a 5.3 nc gate-drain charge q gd 3.8 turn-on delay time t d(on) 30 50 rise time t r v dd = ? 10 v, r l = 15 30 50 turn-off delay time t d(off) v dd = ? 10 v, r l = 15 i d ? 1 a, v gen = ? 4.5 v, r g = 6 110 200 ns fall time t f 65 110 source-drain reverse recovery time t rr i f = ? 1.3 a, di/dt = 100 a/ s 45 80 notes a pulse test; pulse width 300 s, duty cycle 2%. b guaranteed by design, not subject to production testing.

0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 0 6 12 18 24 30 02468 v gs = 5 thru 2 v t c = 125 c ? 55 c 25 c output characteristics transfer characteristics v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d 1.5 v 0 ? 1 v
si4403dy vishay siliconix new product document number: 71683 s-04393 ? rev. a, 13-aug-01 www.vishay.com 3

? on-resistance ( r ds(on) ) 0.6 0.8 1.0 1.2 1.4 1.6 ? 50 ? 25 0 25 50 75 100 125 150 0 1 2 3 4 5 0 7 14 21 28 35 0.000 0.015 0.030 0.045 0.060 0.075 0 6 12 18 24 30 v ds ? drain-to-source voltage (v) c rss v ds = 10 v i d = 7.4 a i d ? drain current (a) v gs = 4.5 v i d = 7.4 a gate charge on-resistance vs. drain current ? gate-to-source voltage (v) q g ? total gate charge (nc) c ? capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.015 0.030 0.045 0.060 0.075 012345 t j = 25 c i d = 7.4 a 30 10 1 source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s v gs = 4.5 v t j = 150 c v gs = 2.5 v v gs = 1.8 v 0 1000 2000 3000 4000 5000 048121620 c oss c iss
si4403dy vishay siliconix new product www.vishay.com 4 document number: 71683 s-04393 ? rev. a, 13-aug-01

? 0.4 ? 0.2 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j ? temperature ( c) 0 24 40 8 16 power (w) single pulse power, junction-to-ambient time (sec) 32 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 71 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 ? 3 10 ? 2 110 10 ? 1 10 ? 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance 1 100 10 10 ? 1 10 ? 2
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.

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